Intel and Micron argue that together they created the first new type of memory then flash-type NAND introduced 1989. The new type called 3D Xpoint is a nonvolatile memory that according to both companies are up to a thousand times faster than flash memory type NAND. 3D Xpoint presented yesterday in San Francisco.
The new memory type is meant to be a complement to both the DRAM (RAM) and flash memory. It should be between the two types in terms of both performance and price. Compared with the dram has a ten times higher density, it thus requires significantly less space to handle a certain amount of data. In addition, 3D Xpoint have a thousand times longer than the flash memory.
Among the applications where processors in computers can take advantage of very rapid access to stored data include big data and all types of data analysis, but also high end games.
Intel and Micron has worked intensively to create 3D Xpoint since 2012, but scientists at the two companies have been running the project for at least ten years. Technically, it is a construction without transistors. Instead, the voltage of the material itself that the memory circuits are constructed, so that different data can be represented. The actual design resembles a three-dimensional chessboard of memory cells that are connected by metal wires.
No information about when products based on the 3D Xpoint is expected to hit the market . If the technique turns out, this might mean rethinking the basic architectures of operating systems and applications. If 3D Xpoint can replace the frame in performance may, in some cases there is no reason to divide up the architecture of working memory (RAM) and permanent storage (flash and traditional hard drives).
This should mean performance advantages of not having to shovel the data between the two types, which is one of the basic ideas behind the memory databases that SAP’s Hana, except that it is a fast memory in itself.
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